Effect of [6,6]-Phenyl-C61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors

Author

Mohamad, Khairul Anuar ; Alias, Afishah ; Saad, Ismail ; Gosh, Bablu ; Uesugi, K. ; Fukuda, Hiroshi

Author_Institution

Nanoelectron. Device & Mater. (NEMs) Res. Group, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia

fYear

2013

fDate

25-27 Sept. 2013

Firstpage

179

Lastpage

182

Abstract

The influence of [6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO₂ gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility (μ = 0.95-2.2 cm² V^-1 s^-1), low threshold voltages (V_th = -1.1 - -5.4 V), a high on/off current ratio (I_on/I_off = 10⁴), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.

Keywords

nanostructured materials; organic semiconductors; silicon compounds; thin film transistors; PCBM agglomerated nanostructure; SiO₂; SiO₂ gate dielectric; [6,6]-phenyl C₆₁-butyric acid methyl; device performance; grain boundaries; high mobility; molecular microstructure; pentacene-based organic thin-film transistors; surface topography; threshold voltages; Dielectrics; Films; Logic gates; Organic thin film transistors; Pentacene; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on

Conference_Location

Langkawi

Print_ISBN

978-1-4799-1181-3

Type

conf

DOI

10.1109/RSM.2013.6706502

Filename

6706502