Highly sensitive porous PtSi/Si UV detector with high selectivity

Novel porous structure on silicon is proposed for selective ultra violet detection with high quantum efficiency. In order to exploit the single electron effect for this goal, Pt-Si schottky barrier was formed. N-type silicon was electro chemically etched and pores with the height of less than 1 micron were fabricated followed by electrochemical deposition of Platinum. Distinctive and highly responsive behavior of the detector to 365-380 nm wave lengths compared to that of visible range is assumed to be in close relationship with its structural characterizations which is justified through the manner of the shift in breakdown voltage in reverse bias, as the respondent parameter, presented in this report.