DocumentCode :
671176
Title :
Dielectric property of lead titanate thin films prepared on glass substrate at low temperature
Author :
Nurbaya, Z. ; Rusop, M.
Author_Institution :
NANO-Electron. Center (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
197
Lastpage :
199
Abstract :
Lead based titanate (PbTiO3) is one of ferroelectric ceramic family that has been widely investigated of its dielectric property towards high capacitance passive device, i.e. capacitor. It has been known that high annealing temperature is needed to perform perfect crystal level of ferroelectric ceramic that is averagely 650°C done by using crystalline Si substrate with Pt/Ti as intermediate layer. This had been confirmed as the ideal process to have perfectly distribution of uniform grain size with tendency of stable dipole moment. However, high temperature does affect the nucleation site of domain wall where here lays the factor contributes to Pb volatilization and yields to thin films degradation. Further investigation of PbTiO3 thin films preparation at relatively lower temperature was at least 200°C could be the most desirable thin films ever to answer the limitation of source. Therefore, these temperatures make deposition of PbTiO3 possible for glass substrate which has low melting temperature. The current study investigates preparation of PbTiO3 thin films on platinum coated glass substrate through sol-gel spin coating method. The optimum thickness of thin films was achieved by five times of depositions and punctuated with drying process about 200°C for 10mins for each layer. Annealing process was carried out in hot furnace at temperature 300°C to 500°C for 30mins. The prepared thin films were then being measured by impedance analyzer under low frequency about 1000Hz for the dielectric property investigation. It was found that the dielectric constant have linear relationship with annealing temperature. Nevertheless, high dielectric constant resulted to the factor of high dielectric loss that plays a role as in AC signal. In addition, the capacitance value of PbTiO3 thin films is being obtained under low frequency of dielectric constant measurement. Concisely, both d- electric constant and nanometer scaled thin films had influenced much to the capability for high energy storage which will be discussed later in future investigation.
Keywords :
annealing; capacitance; dielectric losses; drying; electric domains; electric moments; ferroelectric ceramics; ferroelectric thin films; grain size; lead compounds; nucleation; permittivity; sol-gel processing; spin coating; PbTiO3; SiO2; annealing process; capacitance; dielectric constant; dielectric loss; dielectric property; dipole moment; domain wall; drying process; ferroelectric ceramic; grain size; impedance analyzer; lead titanate thin films; nucleation site; platinum coated glass substrate; sol-gel spin coating method; temperature 300 degC to 500 degC; thin film degradation; thin film thickness; time 30 min; volatilization; Annealing; Dielectric constant; Substrates; Temperature; Temperature measurement; Titanium compounds; Lead titanate thin films; capacitive property; dielectric property; sol-gel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706507
Filename :
6706507
Link To Document :
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