Title :
The effect of phosphate buffer solution (PBS) concentration on the ion sensitive field-effect transistor (ISFET) detection
Author :
Chong Soon Weng ; Hashim, U. ; Wei-Wen Liu
Author_Institution :
Inst. of Nano-Electron. Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
Abstract :
The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.
Keywords :
ion sensitive field effect transistors; phosphorus compounds; ISFET; deionized water; drain current; ion sensitive field-effect transistor detection; phosphate buffer solution concentration effect; Biomembranes; Electrodes; Fabrication; Logic gates; Sensitivity; Sensors; Silicon; ISFET; PBS; concentration; sensitivity;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706508
