DocumentCode
671177
Title
The effect of phosphate buffer solution (PBS) concentration on the ion sensitive field-effect transistor (ISFET) detection
Author
Chong Soon Weng ; Hashim, U. ; Wei-Wen Liu
Author_Institution
Inst. of Nano-Electron. Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
fYear
2013
fDate
25-27 Sept. 2013
Firstpage
200
Lastpage
203
Abstract
The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.
Keywords
ion sensitive field effect transistors; phosphorus compounds; ISFET; deionized water; drain current; ion sensitive field-effect transistor detection; phosphate buffer solution concentration effect; Biomembranes; Electrodes; Fabrication; Logic gates; Sensitivity; Sensors; Silicon; ISFET; PBS; concentration; sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location
Langkawi
Print_ISBN
978-1-4799-1181-3
Type
conf
DOI
10.1109/RSM.2013.6706508
Filename
6706508
Link To Document