Impact of processing parameters on low-voltage power MOSFET threshold voltage considering defect generation

Power MOSFET is the most commonly used power device due to its low gate drive power and fast switching speed compared to the existing power bipolar transistor. In this study, the vital parameters in manufacturing the power VD-MOSFET, such as P-base and N-drift doping concentrations, thickness of N-drift region, and gate width are investigated to overcome MOSFET defects like NBTI and HCI; as degradation due to NBTI and HCI results shift in threshold voltage. The impact of those parameters on the threshold voltage is recorded and analysed in this study. The VD-MOSFET model used in this study is capable to withstand the breakdown voltage less than 30V. The model is simulated using 2D device and process simulation software from SILVACO; ATLAS and ATHENA. It is shown that, concentration of P-base doping is significant in determining threshold voltage and threshold voltage is proportional to the P-base doping concentration.