Nitrogenated amorphous carbon film by thermal chemical vapor deposition

Author

Mohamad, Fadzilah ; Rusop, M.

Author_Institution

NANOElecTronic Center (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia

fYear

2013

fDate

25-27 Sept. 2013

Firstpage

235

Lastpage

238

Abstract

The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N₂) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.

Keywords

carbon; chemical vapour deposition; nitrogen; scanning electron microscopy; surface morphology; thin films; C; C:N; R6243 DC voltage current source-monitoring; SEM; TCVD technique; argon gas; camphor oil; carbon source; carrier gas; dopant source; electrical properties; nitrogen atoms; nitrogen gas; nitrogenated amorphous carbon thin film; scanning electron microscopy; semipro curve software; structural properties; surface morphology; temperature 750 degC; thermal chemical vapour deposition technique; Carbon; Chemical vapor deposition; Conductivity; Doping; Films; Nitrogen; Surface treatment; Nitrogenated amorphous carbon; Thermal Chemical Vapor Deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on

Conference_Location

Langkawi

Print_ISBN

978-1-4799-1181-3

Type

conf

DOI

10.1109/RSM.2013.6706517

Filename

6706517