Title :
Nitrogenated amorphous carbon film by thermal chemical vapor deposition
Author :
Mohamad, Fadzilah ; Rusop, M.
Author_Institution :
NANOElecTronic Center (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.
Keywords :
carbon; chemical vapour deposition; nitrogen; scanning electron microscopy; surface morphology; thin films; C; C:N; R6243 DC voltage current source-monitoring; SEM; TCVD technique; argon gas; camphor oil; carbon source; carrier gas; dopant source; electrical properties; nitrogen atoms; nitrogen gas; nitrogenated amorphous carbon thin film; scanning electron microscopy; semipro curve software; structural properties; surface morphology; temperature 750 degC; thermal chemical vapour deposition technique; Carbon; Chemical vapor deposition; Conductivity; Doping; Films; Nitrogen; Surface treatment; Nitrogenated amorphous carbon; Thermal Chemical Vapor Deposition;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706517
