DocumentCode :
671216
Title :
High frequency small signal modeling of CNTFET
Author :
Farhana, Soheli ; Alam, A. H. M. Zahirul ; Khan, Sharifullah
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
348
Lastpage :
351
Abstract :
In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.
Keywords :
SPICE; carbon nanotube field effect transistors; elemental semiconductors; semiconductor device models; C; CNTFET; SPICE model; enhancement mode carbon nanotube transistor; frequency 10 THz; high frequency response; high frequency small signal modeling; Erbium; CNT; FET; band-gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706547
Filename :
6706547
Link To Document :
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