• DocumentCode
    671224
  • Title

    Design optimization of MEMS dual-leg shaped piezoresistive microcantilever

  • Author

    Rahim, R.A. ; Bais, Badariah ; Majlis, Burhanuddin Yeop ; Fareed, Sheik

  • Author_Institution
    Fac. of Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
  • fYear
    2013
  • fDate
    25-27 Sept. 2013
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    In this paper, an optimization on the mechanical behaviour of silicon piezoresistive microcantilever (PRM) has been carried out. Using CoventorWare 2008, the mechanical behavior of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance was represented with mechanical displacement of the suspended PRM sensor with regards to various factors such as the microcantilever shape and geometrical dimensions, the materials and the effect of incorporating stress concentration region (SCR) on the device structure. In this research work, a single-layer piezoresistive microcantilever in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon is utilized. Two dual-leg shaped piezoresistive microcantilever designs have been proposed: piezoresistive microcantilever with and without a square hole. From the simulation results, it can be seen that the maximum displacement is observed at maximum microcantilever´s length and minimum thickness. The incorporation of a square hole as an SCR not only shows a significant increase in Mises stress value but also in the displacement of the microcantilever structure. Single-crystalline Si was chosen as the device material for the fabrication of single-layer piezoresistive microcantilever due to its high piezoresistive coefficients and thermal conductivity.
  • Keywords
    cantilevers; elemental semiconductors; micromechanical devices; optimisation; piezoresistive devices; silicon; thermal conductivity; CoventorWare 2008; MEMS dual-leg shaped piezoresistive microcantilever; Mises stress value; Si; design optimization; geometrical dimensions; microcantilever shape; piezoresistive coefficients; piezoresistor; silicon piezoresistive microcantilever; single-crystalline silicon; square hole; stress concentration region; thermal conductivity; Biosensors; Piezoresistance; Sensitivity; Silicon; Stress; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
  • Conference_Location
    Langkawi
  • Print_ISBN
    978-1-4799-1181-3
  • Type

    conf

  • DOI
    10.1109/RSM.2013.6706555
  • Filename
    6706555