Thermal and thermo-mechanical simulations on high power diode packaging for a typical power adapter

Author

Pei-Hsuan Wu ; Zhong-Yi Wu ; Hao-Chun Tang ; Hu, Anping ; Kao, Jung-Chun ; Lee, Razak ; Chen, Ru Shan ; Chung, Hum ; Lwo Ben-Je

Author_Institution

Dept. of Mechatron., Energy & Aerosp. Eng., Nat. Defense Univ., Dasi, Taiwan

fYear

2013

fDate

22-25 Oct. 2013

Firstpage

176

Lastpage

179

Abstract

To analyze thermal and thermo-stress behaviors of the diode packaging for high power applications, a global-local scheme through finite element simulations are performed in this study. To derive necessary boundary conditions and to verify the simulation results, thermal experiments are carried out for comparisons. New diode packaging designs are next proposed in this paper and their thermal resistance and structure stress are finally compared with the currently used ones to study the improvements.

Keywords

Schottky diodes; finite element analysis; semiconductor device packaging; thermal resistance; thermomechanical treatment; boundary conditions; finite element simulations; global-local scheme; high power applications; high power diode packaging; power adapter; structure stress; thermal resistance; thermal simulations; thermo-mechanical simulations; Adaptation models; Packaging; Schottky diodes; Stress; Thermal analysis; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International

Conference_Location

Taipei

ISSN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2013.6706643

Filename

6706643