Title :
Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs
Author :
Akhter, M. ; Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; etching; gallium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; AlGaN; DUV EL; LED structure; MQW; bandwidth measurements; deep ultraviolet microLED electroluminescence; light emission; modulation bandwidth; multiple quantum well aluminium gallium nitride; sapphire substrate; wafer surface etching; wavelength 250 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.4253
