DocumentCode :
671323
Title :
Cu wire HAST fail mechanism investigation for BGA package
Author :
Chih Hung Chang ; Wen Hung Huang ; Pao Tung Pan
Author_Institution :
Technol. Dev. Dept., NXP Semicond. Taiwan, Kaohsiung, Taiwan
fYear :
2013
fDate :
22-25 Oct. 2013
Firstpage :
298
Lastpage :
301
Abstract :
The usage of copper wire is becoming more widespread in recent time. However, it is well known that copper wire is more critical compared to gold wire, in terms of wire bond workability and reliability. Especially, during HAST (Highly accelerated stress test) copper wire is sensitive for corrosion of the Cu-Al intermetallic compound (IMC) resulting into ball lift failure. Therefore, the purpose of this paper is to study the root causes for HAST failures with copper wire bonding in BGA packages. Moreover, Cu-Al IMC corrosion is described with reference to recent publications. To increase product robustness against Cu-Al IMC corrosion, the factory environment and process control are important. In addition, the HAST test condition for the BGA packages specifically, is also proven to be an important parameter due to material stability. A combination of high halogen-ions concentration levels (e.g. Cl-) and bias will accelerate the Cu-Al IMC corrosion leading to ball lift failures. One potential source of halogen-ions is the substrate itself. Two different temperatures (110°C, 130°C) which are typical HAST test temperatures, were applied for the chemical analysis of the substrates. From test results, it was shown that extraction at higher temperature will lead to a higher concentration of halogen-ions. This increases the risk for Cu-Al IMC corrosion phenomena. In summary, it was revealed that halogen-ions from the substrate are released at higher HAST test temperature.
Keywords :
ball grid arrays; chemical analysis; copper alloys; lead bonding; reliability; BGA package; Cu; HAST fail mechanism investigation; ball lift failure; chemical analysis; copper wire bonding; high halogen ions concentration levels; highly accelerated stress test; intermetallic compound; material stability; temperature 110 degC; temperature 130 degC; wire bond reliability; wire bond workability; Bonding; Compounds; Copper; Corrosion; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location :
Taipei
ISSN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2013.6706659
Filename :
6706659
Link To Document :
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