DocumentCode
671332
Title
A novel through-hole filling technology for next generation organic interposer applications
Author
Tao-Chi Liu ; Shing-Ru Wang ; Corey, Michael
Author_Institution
Global Dev. Applic. Center, Enthone Inc., Taoyuan, Taiwan
fYear
2013
fDate
22-25 Oct. 2013
Firstpage
47
Lastpage
50
Abstract
We report an approach to full fill the laser drilled through-hole by DC electroplating. A hydrodynamics-sensitive organic compound with selective inhibition being used to Cu electrodeposition is required as an additive of plating bath. Void-free Cu column can be fabricated as the interconnects in the organic substrate of 2.5D IC interposer. The residual dimples were almost eliminated with thin overburden at low current density and high agitation speed. The following Cu thickness thinning by Chemical Mechanical polish (CMP) can be reduced further. 3D X-ray inspection indicates that the filled through-hole of aspect ratio of 2 to 2.5 can be completely filled within 75 minutes, which is the highest speed among the reported interposer metallization. It is also compatible with most of PCB plating equipment. Compare with recent TSV process using semiconductor tool, this novel technology is beneficial to reduce the cost and process of manufacturing. Through-hole filling will have potential applications in 3D IC packaging.
Keywords
chemical mechanical polishing; copper; electroplating; filling; integrated circuit packaging; laser beam machining; metallisation; three-dimensional integrated circuits; 3D IC packaging; 3D X ray inspection; Cu; DC electroplating; IC interposer; PCB plating equipment; chemical mechanical polish; electrodeposition; high agitation speed; hydrodynamics sensitive organic compound; interposer metallization; laser drilled through hole; low current density; next generation organic interposer applications; organic substrate; plating bath; residual dimples; selective inhibition; through hole filling technology; Additives; Filling; Substrates; Surface treatment; Three-dimensional displays; Through-silicon vias; Variable speed drives;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location
Taipei
ISSN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2013.6706668
Filename
6706668
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