DocumentCode
671357
Title
High frequency substrate materials with highly thermal resistance and low dielectric properties
Author
Feng-Po Tseng ; Kuei-Yi Chuang ; Lu-Shih Liao ; Kuo-Chan Chiou
Author_Institution
Mater. & Chem. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2013
fDate
22-25 Oct. 2013
Firstpage
109
Lastpage
112
Abstract
A variety of electronic products, light, thin, short, small basic needs, and in the high-function, high transmission, high efficiency operation, the promotion of electronic products to the multi-function, high speed and high power aspects of the design, the development of copper clad laminate with both of better thermal resistance and low dielectric insulating substrate material simultaneously is expected to dominate the market in the near future. In this study, a new developed dielectrics exhibit high thermal stability and can pass the UL-94 V0 flame retarding standard without the use of halogen or phosphorous flame retardant. Copper clad laminate from AIS dielectric shows high Tg, good thermal properties, low dielectric properties and is compatible with traditional FR-4 processing condition. Copper clad laminate from AISB dielectric shows super high Tg (Tg > 240 °C), good thermal properties, low dielectric properties and can pass the UL-94 V0 flame retarding standard. It is believed that the new developed AIS and or AISB resin impregnate with low Dk glass cloth will be surely quite potential application in high-frequency substrate materials and meets global environmental regulations.
Keywords
electronic products; laminates; permittivity; thermal resistance; thermal stability; copper clad laminate; electronic products; flame retarding standard; high frequency substrate materials; high thermal stability; highly thermal resistance; low dielectric properties; thermal properties; Copper; Dielectric constant; Laminates; Polymers; Resins;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location
Taipei
ISSN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2013.6706693
Filename
6706693
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