The Effect of Proton Energy on SEU Cross Section of a 16 Mbit TFT PMOS SRAM with DRAM Capacitors

Author

Uznanski, Slawosz ; Alia, R. Garcia ; Blackmore, Ewart ; Brugger, M. ; Gaillard, R. ; Mekki, J. ; Todd, Benjamin ; Trinczek, Michael ; Villanueva, Andrea Vilar

Author_Institution

Technol. Dept., Eur. Organ. for Nucl. Res., Cern, France

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3074

Lastpage

3079

Abstract

Proton experimental data are analyzed for a 16-Mbit thin-film-transistor (TFT) PMOS static random access memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the single event upset (SEU) proton cross section for the energies above 100 MeV. Monte-Carlo simulations reproduce the experimentally measured cross sections up to 480 MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100 MeV.

Keywords

DRAM chips; Monte Carlo methods; SRAM chips; capacitors; proton effects; radiation hardening (electronics); thin film transistors; 16 Mbit TFT PMOS SRAM; 16-Mbit thin film transistor; DRAM capacitors; LHC; Monte Carlo simulations; PMOS static random access memory; SEU cross section; SEU proton cross section; high-Z materials; large hadron collider; proton energy effect; single event upset; Large Hadron Collider; Monte Carlo methods; Protons; SRAM cells; Single event upsets; Thin film transistors; Tungsten; European Organization for Nuclear Research (CERN); Large Hadron Collider (LHC); proton; single event upset (SEU); static random access memory (SRAM); tungsten;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2368150

Filename

6971241