• DocumentCode
    67192
  • Title

    Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions

  • Author

    Cardoza, David ; LaLumondiere, Stephen D. ; Tockstein, Michael A. ; Brewe, Dale L. ; Wells, Nathan P. ; Koga, R. ; Gaab, Kevin M. ; Lotshaw, William T. ; Moss, Steven C.

  • Author_Institution
    Photonics Technol. Dept., Aerosp. Corp., Los Angeles, CA, USA
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3154
  • Lastpage
    3162
  • Abstract
    We report an experimental study of the transients generated by pulsed x-rays, heavy ions, and different laser wavelengths in a Si p-i-n photodiode. We compare the charge collected by all of the excitation methods to determine the equivalent LET for pulsed x-rays relative to heavy ions. Our comparisons show that pulsed x-rays from synchrotron sources can generate a large range of equivalent LET and generate transients similar to those excited by laser pulses and heavy ion strikes. We also look at how the pulse width of the transients changes for the different excitation methods. We show that the charge collected with pulsed x-rays is greater than expected as the x-ray photon energy increases. Combined with their capability of focusing to small spot sizes and of penetrating metallization, pulsed x-rays are a promising new tool for high resolution screening of SEE susceptibility.
  • Keywords
    X-ray lasers; elemental semiconductors; metallisation; p-i-n photodiodes; radiation hardening (electronics); silicon; synchrotrons; SEE susceptibility; Si; Si p-i-n photodiode; equivalent LET; heavy ion; laser pulses; laser wavelengths; penetrating metallization; short pulsed X-rays; single event transients; synchrotron sources; transient generation; Integrated circuit reliability; Radiation hardening (electronics); Semiconductor device reliability; Single event transients; Transient analysis; X-ray applications; Integrated circuit reliability; radiation hardening; semiconductor device reliability; single event effects; single event transients; synchrotron radiation; x-ray applications;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2368057
  • Filename
    6971247