A novel ultra high voltage sidewall implant super junction MOSFET using arsenic implantation under trench bottom

In this paper a novel super junction device with vertical deep trench is proposed which have arsenic implant at the bottom of the trench. The device is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench forms vertical sidewall into which boron is implanted and diffused to form a P-type doping pillar which is charge balanced to the N-type epitaxial drift region. Boron implantation causes back scattering of ions which is finally collected at the bottom of the trench which contributes to early breakdown of the device. This paper present new technology of sidewall implant super junction using arsenic implantation to compensate for high concentration of bottom at the trench bottom developed by Sentaurus Process and Device technology-computer-aided-design (TCAD) simulators.