Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates

Author

Kuen-Hsien Wu ; Chia-Chun Tang ; Sheng-Chun Lin

Author_Institution

Dept. of Electro-Opt. Eng., Southern Taiwan Univ. of Sci. & Technol., Taiwan

fYear

2013

fDate

6-9 Oct. 2013

Firstpage

105

Lastpage

107

Abstract

This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.

Keywords

II-VI semiconductors; nanoporous materials; photoconductivity; photodetectors; porous semiconductors; semiconductor thin films; ultraviolet detectors; wide band gap semiconductors; Si; ZnO; ZnO-on-ONPS devices; low-cost UV photodetectors; oxidized nano-porous-silicon substrates; photo-to-dark current ratio; ultra-violet sensing devices; wavelength 300 nm to 400 nm; zinc-oxide thin-films; Absorption; Current measurement; Electronic mail; Photodetectors; Photoluminescence; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th

Conference_Location

Tainan

Print_ISBN

978-1-4799-3386-0

Type

conf

DOI

10.1109/NMDC.2013.6707467

Filename

6707467