Effects of MoSi2 nanocrystals in nonvolatile memory devices

Author

Jian-Yang Lin ; Sheng-Chi Chen

Author_Institution

Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan

fYear

2013

fDate

6-9 Oct. 2013

Firstpage

9

Lastpage

12

Abstract

This work has demonstrated the electron charging and discharging effects of MoSi₂ nanocrystals embedded in the a-Si layer of a nonvolatile memory (NVM) structure. The MoSi₂ nanocrystals were formed by the thermal annealing of the Mo-Si layer. A very thin silicon dioxide layer of 5 nm was deposited as the tunnel dielectric and a significant capacitance-voltage hysteresis of voltage shift was observed by using another SiO₂ layer as the control oxide. The memory window of the SiO₂/Mo-Si/SiO₂ structure with MoSi₂ nanocrystals is sufficiently high even under low-voltage programming.

Keywords

annealing; dielectric hysteresis; discharges (electric); molybdenum compounds; nanostructured materials; random-access storage; silicon compounds; SiO₂-MoSi-SiO₂; capacitance-voltage hysteresis; electron charging effect; electron discharging effects; memory window; nanocrystals; nonvolatile memory devices; nonvolatile memory structure; size 5 nm; thermal annealing; thin silicon dioxide layer; tunnel dielectric; voltage shift; Annealing; Artificial intelligence; Nanoscale devices; Nitrogen; Silicides; Silicon; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th

Conference_Location

Tainan

Print_ISBN

978-1-4799-3386-0

Type

conf

DOI

10.1109/NMDC.2013.6707469

Filename

6707469