Title :
Effects of MoSi2 nanocrystals in nonvolatile memory devices
Author :
Jian-Yang Lin ; Sheng-Chi Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan
Abstract :
This work has demonstrated the electron charging and discharging effects of MoSi2 nanocrystals embedded in the a-Si layer of a nonvolatile memory (NVM) structure. The MoSi2 nanocrystals were formed by the thermal annealing of the Mo-Si layer. A very thin silicon dioxide layer of 5 nm was deposited as the tunnel dielectric and a significant capacitance-voltage hysteresis of voltage shift was observed by using another SiO2 layer as the control oxide. The memory window of the SiO2/Mo-Si/SiO2 structure with MoSi2 nanocrystals is sufficiently high even under low-voltage programming.
Keywords :
annealing; dielectric hysteresis; discharges (electric); molybdenum compounds; nanostructured materials; random-access storage; silicon compounds; SiO2-MoSi-SiO2; capacitance-voltage hysteresis; electron charging effect; electron discharging effects; memory window; nanocrystals; nonvolatile memory devices; nonvolatile memory structure; size 5 nm; thermal annealing; thin silicon dioxide layer; tunnel dielectric; voltage shift; Annealing; Artificial intelligence; Nanoscale devices; Nitrogen; Silicides; Silicon; Three-dimensional displays;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-3386-0
DOI :
10.1109/NMDC.2013.6707469
