Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application

Author

Jian-Yang Lin ; Jyun-Hao Chen

Author_Institution

Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan

fYear

2013

fDate

6-9 Oct. 2013

Firstpage

20

Lastpage

23

Abstract

The bipolar resistive switching characteristics of the Ta₂O₅-based resistive random access memories with a Pt/Ta₂O₅/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10⁵ cycles under pulse switching operation and retention characteristics up to 10⁴ s at room temperature have been achieved in this work.

Keywords

platinum; random-access storage; tantalum compounds; titanium compounds; ON/OFF state; Pt-Ta₂O₅-TiN; bipolar resistive switching characteristics; multi-level data storage; nonvolatile memory application; pulse switching retention characteristics; resistance ratio; resistive random access memories; set voltage; temperature 293 K to 298 K; Current measurement; Radio frequency; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th

Conference_Location

Tainan

Print_ISBN

978-1-4799-3386-0

Type

conf

DOI

10.1109/NMDC.2013.6707472

Filename

6707472