Title :
Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application
Author :
Jian-Yang Lin ; Jyun-Hao Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan
Abstract :
The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 105 cycles under pulse switching operation and retention characteristics up to 104 s at room temperature have been achieved in this work.
Keywords :
platinum; random-access storage; tantalum compounds; titanium compounds; ON/OFF state; Pt-Ta2O5-TiN; bipolar resistive switching characteristics; multi-level data storage; nonvolatile memory application; pulse switching retention characteristics; resistance ratio; resistive random access memories; set voltage; temperature 293 K to 298 K; Current measurement; Radio frequency; Switches; Tin;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-3386-0
DOI :
10.1109/NMDC.2013.6707472
