Title :
Optimization of SiC Schottky diode using linear p-top for edge termination
Author :
Mrinal, Aryadeep ; Vijay, Kumar M. P. ; Vivek, N. ; Manjunatha, M. ; Sheu, G. ; Shao-Ming Yang
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
The trade-off between on-state and off-state characteristics of 4H-SiC Schottky diode has been optimized using linear p-top in the edge termination structure. The advantage of linear p-top has been illustrated by comparing results of 4H-SiC Schottky diode with planar structure using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. The breakdown-voltage characteristic of the SiC Schottky diode is significantly improved with the linear p-top edge termination. The planar SiC Schottky diode shows less than 300-V breakdown voltage, while the linear p-top structure shows breakdown voltage greater than 800-V with forward voltage <;1.5-V. The pronounced improvement in the breakdown-voltage characteristics is attributed to the reduction of electric field at the Schottky contact edge well by the linear p-top edge termination. The change in forward voltage and breakdown voltage with the variation in length of P-top mask in the termination region is observed.
Keywords :
Schottky barriers; Schottky diodes; semiconductor device breakdown; silicon compounds; technology CAD (electronics); wide band gap semiconductors; 4H-SiC Schottky diode; Silvaco Atlas technology-computer-aided-design simulation tool; TCAD; breakdown-voltage characteristic; edge termination structure; forward voltage; linear p-top; off-state characteristics; on-state characteristics; planar structure; Anodes; Breakdown voltage; Cathodes; Electric breakdown; Silicon carbide; Substrates; Switches;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-3386-0
DOI :
10.1109/NMDC.2013.6707473
