Title :
Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description
Author :
Schnieder, Frank ; Bengtsson, Olof ; Schmuckle, F. ; Rudolph, Matthias ; Heinrich, Wolfgang
Author_Institution :
Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
A comprehensive electro-thermal model of a packaged GaN high electron-mobility transistor (GaN-HEMT) is presented. It includes an RF large-signal description, as well as thermal coupling between the individual cells of a powerbar. Thus, it allows studying the inhomogeneous RF power distribution and other effects within the transistor. The model is verified and applied to a 50-W GaN-HEMT powerbar. The model proves to represent a versatile tool for transistor design. Important features of the new version compared to existing versions are its capability to predict internal electrical instabilities and to allow for optimization of the cell combining.
Keywords :
III-V semiconductors; gallium compounds; power HEMT; semiconductor device models; semiconductor device packaging; wide band gap semiconductors; GaN; HEMT; cell combining optimization; electron-mobility transistor; electrothermal large-signal description; inhomogeneous RF power distribution; internal electrical instability prediction; power 50 W; power transistor packaging; powerbar cell; thermal coupling; Electro-thermal model; GaN high electron-mobility transistors (GaN-HEMTs); large-signal modeling; power transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2261089
