• DocumentCode
    6746
  • Title

    Spike-Timing-Dependent Plasticity Using Biologically Realistic Action Potentials and Low-Temperature Materials

  • Author

    Subramaniam, Anand ; Cantley, K.D. ; Bersuker, Gennadi ; Gilmer, D. ; Vogel, Eric M.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
  • Volume
    12
  • Issue
    3
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    450
  • Lastpage
    459
  • Abstract
    Spike-timing-dependent plasticity (STDP) is a fundamental learning rule observed in biological synapses that is desirable to replicate in neuromorphic electronic systems. Nanocrystalline-silicon thin film transistors (TFTs) and memristors can be fabricated at low temperatures, and are suitable for use in such systems because of their potential for high density, 3-D integration. In this paper, a compact and robust learning circuit that implements STDP using biologically realistic nonmodulated rectangular voltage pulses is demonstrated. This is accomplished through the use of a novel nanoparticle memory-TFT with short retention time at the output of the neuron circuit that drives memristive synapses. Similarities to biological measurements are examined with single and repeating spike pairs or different timing intervals and frequencies, as well as with spike triplets.
  • Keywords
    biology; elemental semiconductors; learning (artificial intelligence); low-temperature techniques; memory architecture; memristors; nanoelectronics; nanostructured materials; neurophysiology; plasticity; silicon; thin film transistors; 3D integration; STDP; TFT; biological measurements; biological synapses; biologically realistic action potentials; biologically realistic nonmodulated rectangular voltage pulses; fundamental learning rule; low-temperature materials; memristor; nanocrystalline-silicon thin film transistors; nanoparticle memory-TFT; neuromorphic electronic systems; neuron circuit; robust learning circuit; spike pair repeat; spike triplets; spike-timing-dependent plasticity; Low-temperature nanoelectronics; memristor; neuromorphic circuit; spike-timing-dependent plasticity; synapse;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2256366
  • Filename
    6493449