DocumentCode :
675564
Title :
Fully-depleted-silicon-on-insulator from R&D concept to industrial reality
Author :
Le Pailleur, L.
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
For years, power efficiency was not the primary concern for most of electronic applications. Apart specific ultra-low power appliances such as watches or security sensors, other equipment were at best only concerned with thermal management. First awareness came from the mobile phones phenomenal success and subsequently, from end-customers requesting to get over one day of autonomy.
Keywords :
research and development; semiconductor industry; silicon-on-insulator; R&D concept; Si; fully-depleted-silicon-on-insulator; industrial reality; mobile phones; power efficiency; Industries; Logic gates; Manufacturing; Performance evaluation; System-on-chip; Technological innovation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716511
Filename :
6716511
Link To Document :
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