• DocumentCode
    675576
  • Title

    Simulation of statistical variability in nanometer scale CMOS devices

  • Author

    Asenov, Asen

  • Author_Institution
    Gold Stand. Simulations Ltd., Univ. of Glasgow, Glasgow, UK
  • fYear
    2013
  • fDate
    7-10 Oct. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper we will present recent advances in the simulation of statistical variability and reliability in advanced CMOS devices and circuits.
  • Keywords
    CMOS integrated circuits; circuit simulation; integrated circuit reliability; statistical analysis; nanometer scale CMOS device; reliability; statistical variability; CMOS integrated circuits; FinFETs; Fluctuations; Integrated circuit modeling; Logic gates; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2013.6716537
  • Filename
    6716537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=675576