DocumentCode
675582
Title
UTBB FDSOI scaling enablers for the 10nm node
Author
Grenouillet, L. ; Liu, Quanwei ; Wacquez, R. ; Morin, P. ; Loubet, N. ; Cooper, Daniel ; Pofelski, A. ; Weng, Wen-Yin ; Bauman, F. ; Gribelyuk, M. ; Wang, Yannan ; De Salvo, B. ; Gimbert, J. ; Cheng, K. ; Le Tiec, Y. ; Chanemougame, D. ; Augendre, E. ; Ma
Author_Institution
CEA-LETI, Albany, NY, USA
fYear
2013
fDate
7-10 Oct. 2013
Firstpage
1
Lastpage
2
Abstract
UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main front-end-of-the-line knobs to scale down this promising technology to the 10nm node.
Keywords
field effect transistors; low-power electronics; silicon-on-insulator; UTBB FDSOI technology; performance-energy consumption trade-off; scaling enablers; size 10 nm; Capacitance; Delays; Logic gates; Performance evaluation; Silicon; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/S3S.2013.6716546
Filename
6716546
Link To Document