• DocumentCode
    676322
  • Title

    Exploiting partially defective LUTs: Why you don´t need perfect fabrication

  • Author

    DeHon, Andre ; Mehta, Neerav

  • Author_Institution
    Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Firstpage
    12
  • Lastpage
    19
  • Abstract
    Shrinking integrated circuit feature sizes lead to increased variation and higher defect rates. Prior work has shown how to tolerate the failure of entire LUTs and how to tolerate failures and high variation in interconnect. We show how to use LUTs even when they are partially defective - a form of fine-grained defect tolerance. We characterize the defect tolerance of a range of mapping strategies for defective LUTs, including LUT swapping in a cluster, input permutation, input polarity selection, defect-aware packing, and defect-aware placement. By tolerating partially defective LUTs, we show that, even without allocating dedicated spare LUTs, it is possible to achieve near perfect yield with cluster local remapping when roughly 1% of the LUT multiplexers fail to switch. With full, defect-aware placement, this can increase to 10-25% with just a few extra rows and columns. In contrast, substitution of perfect LUTs to dedicated spares only tolerates failure rates of 0.01-0.05%.
  • Keywords
    failure analysis; field programmable gate arrays; integrated circuit reliability; multiplexing equipment; table lookup; FPGA; LUT multiplexers; LUT swapping; cluster local remapping; dedicated spare LUT; defect rates; defect-aware packing; defect-aware placement; failure rates; fine-grained defect tolerance; input permutation; input polarity selection; integrated circuit feature sizes; mapping strategy; partially-defective LUT; Field programmable gate arrays; Inverters; Multiplexing; Switches; Table lookup; Transforms; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Field-Programmable Technology (FPT), 2013 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-2199-7
  • Type

    conf

  • DOI
    10.1109/FPT.2013.6718323
  • Filename
    6718323