Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

Author

Wookyung Sun ; Hyungsoon Shin

Author_Institution

Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea

fYear

2013

fDate

22-25 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

The substrate doping concentration dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using the effective deformation potential. The electron mobility model includes coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. The calculated results suggest that low substrate doping concentration on the (100)/<;110> nMOSFETs should be advantageous for strain-induced electron mobility enhancement at high effective electric field.

Keywords

MOSFET; deformation; electron mobility; semiconductor device models; semiconductor doping; surface roughness; Coulomb scattering; effective deformation potential; electric field; electron mobility model; intervalley phonon scattering; intravalley phonon scattering; strain-enhanced electron mobility; strain-induced electron mobility enhancement; substrate doping concentration dependence; surface roughness scattering; uniaxial strained nMOSFET; Electric potential; Electron mobility; MOSFET; Phonons; Scattering; Tensile strain; deformation potential; electron; mobility; phonon mobility; strain; stress; substrate doping concentration;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2013 - 2013 IEEE Region 10 Conference (31194)

Conference_Location

Xi´an

ISSN

2159-3442

Print_ISBN

978-1-4799-2825-5

Type

conf

DOI

10.1109/TENCON.2013.6718489

Filename

6718489