Title :
Relaxed wear leveling approach for non-volatile memories
Author :
Cheng Ji ; Liang Shi
Author_Institution :
Sch. of Comput. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.
Keywords :
digital storage; performance evaluation; wear; non-volatile memories; relaxed wear leveling approach; wear cycles; Algorithm design and analysis; Ash; Bismuth; Ear; Memory management; Nonvolatile memory; Random access memory;
Conference_Titel :
TENCON 2013 - 2013 IEEE Region 10 Conference (31194)
Conference_Location :
Xi´an
Print_ISBN :
978-1-4799-2825-5
DOI :
10.1109/TENCON.2013.6718968
