New quantum effect photodetector array Readout and display

A novel quantum effect photodetector array consisted of AlAs/GaAs/InGaAs/GaAs/InAs/ quantum-dots in quantum-well hybrid structure has been tested. It showed a wide response wavelength range from 400 nm to 1000 nm. The low threshold voltage (-0.8 V) and the high responsibility (10 A/W) at 77 K made it a good choice for optical detection. A custom-made capacitor feedback transimpendance amplifier (CTIA) readout circuit has been designed and processed to readout photoelectric conversion signals. The readout linearity was better than 99.5% by experiment. The signal to noise ratio and the monochrome voltage responsibility reached about 67 dB and 10 A/W respectively when the photodetector was biased -1.0 V and irradiated under a 633 nm laser. A data acquisition accompanied by a display system has also been designed and presented at last to verify the application prospect of this novel photodetector. In view of the different photo-response of each detector in the photo array, we analyzed the non- uniformity correction (NUC) method, and a method of two-point multi-section correction is presented.