Title :
Performance of Crossed Anisotropy Multilayered CoZrNb Films as IC Chip Level Electromagnetic Noise Suppressor
Author :
Shimada, Yusuke ; Jingyan Ma ; Ito, Takao ; Yanagi, Kenjiro ; Endo, Yuta ; Muroga, Sho ; Yamaguchi, Masaki
Author_Institution :
Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
Abstract :
Co-Zr-Nb multilayers with crossed anisotropy along with multilayers with uniaxial anisotropy were investigated from the standpoint of electromagnetic noise suppressors. Frequency dependences of conduction losses and magnetic near field intensity of a microstrip line (MSL) covered with these multilayers were measured simultaneously. It was found that ferromagnetic resonance excited by RF field from MSL takes a major role of noise suppression over a wide frequency. The ferromagnetic resonance frequency is determined by intrinsic anisotropy field. In addition, shape anisotropy field caused by presence of MSL is negligibly small. The in-plane isotropy feature of noise suppressing performance for the crossed anisotropy films was verified experimentally and numerically.
Keywords :
cobalt alloys; ferromagnetic resonance; magnetic anisotropy; magnetic multilayers; magnetic thin films; metallic thin films; niobium alloys; zirconium alloys; CoZrNb; IC chip level; MSL; RF field; conduction losses; crossed anisotropy multilayered CoZrNb films; electromagnetic noise suppressor; ferromagnetic resonance frequency; intrinsic anisotropy field; magnetic near field intensity; microstrip line; shape anisotropy field; uniaxial anisotropy; Anisotropic magnetoresistance; Integrated circuits; Magnetic multilayers; Magnetic noise; Magnetic shielding; Perpendicular magnetic anisotropy; Co-Zr-Nb; Conductive loss; electromagnetic noise suppressor; ferromagnetic resonance (FMR); integrated circuit (IC) chip; microstrip line (MSL); near field; permeability thin film;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2331854
