DocumentCode :
678768
Title :
A BIST method for TSVs pre-bond test
Author :
Zimouche, Hakim ; Di Natale, G. ; Flottes, M.-L. ; Rouzeyre, B.
Author_Institution :
LIRMM, Univ. Montpellier II, Montpellier, France
fYear :
2013
fDate :
16-18 Dec. 2013
Firstpage :
1
Lastpage :
6
Abstract :
In this paper we present a Built-In-Self-Test (BIST) method dedicated to pre-bond testing of TSVs in 3D stacked integrated circuits. The test method aims to detect full-open and pin-hole defects by measuring the discharge delay of TSVs´ equivalent capacitance. The paper presents an original solution for monitoring the discharge delay of the TSV under test independently of the process variations. Simulation-based results shows that the method is robust w.r.t these variations. The proposed BIST circuitry is small enough to be inserted in the available area between the TSVs.
Keywords :
built-in self test; integrated circuit testing; three-dimensional integrated circuits; 3D stacked integrated circuits; BIST circuitry; BIST method; TSV equivalent capacitance; TSV pre-bond test; built-in-self-test method; discharge delay; discharge delay monitoring; full-open defect; pin-hole defect; pre-bond testing; process variations; Built-in self-test; Capacitance; Circuit faults; Delays; Discharges (electric); Silicon; Through-silicon vias; 3D Stacked ICs; Key words; Pre-Bond Test; Process Variations; Sense Amplifier; TSV;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Test Symposium (IDT), 2013 8th International
Conference_Location :
Marrakesh
Type :
conf
DOI :
10.1109/IDT.2013.6727081
Filename :
6727081
Link To Document :
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