Study of GaN radiation sensor after in-core neutron irradiation

Author

Mulligan, Padhraic ; Jie Qiu ; Jinghui Wang ; Cao, Lei R.

Author_Institution

Dept. of Mech. & Aerosp. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2013

fDate

23-27 June 2013

Firstpage

1

Lastpage

5

Abstract

GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 10¹⁶ n/cm². The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors´ performance showed insignificant changes after in-core neutron irradiation at 10¹⁵ n/cm².

Keywords

Schottky diodes; alpha-particle detection; alpha-particle spectra; neutron detection; semiconductor counters; GaN Schottky diode radiation detectors; alpha particle spectrum; capacitance-voltage relation; charge collection efficiency; current-voltage relation; detector performance; freestanding GaN wafer; in-core neutron irradiation; neutron fluences; Capacitance-voltage characteristics; Detectors; Gallium nitride; Neutrons; Radiation detectors; Radiation effects; Schottky diodes; Gallium nitride; alpha detector; high radiation field;

fLanguage

English

Publisher

ieee

Conference_Titel

Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2013 3rd International Conference on

Conference_Location

Marseille

Print_ISBN

978-1-4799-1046-5

Type

conf

DOI

10.1109/ANIMMA.2013.6727935

Filename

6727935