Title :
Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors
Author :
Chaudhary, Muhammad Akmal ; Memon, Zubair Ahmed ; Lees, J. ; Benedikt, J. ; Tasker, P.
Author_Institution :
Dept. of Electr. Eng., Ajman Univ. of Sci. & Technol., Ajman, United Arab Emirates
Abstract :
The inter-modulation distortion products vary in amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variations and looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. Here, the investigations are carried out on 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to quantify the role of baseband impedances on observed hysteresis in the dynamic transfer characteristics. Analysis is performed in envelope domain in order to more effectively reveal the DDT´s sensitivity to electrical baseband memory effects.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; intermodulation distortion; microwave power transistors; wide band gap semiconductors; GaN; GaN HFET; IF active load-pull; baseband electrical memory effects; baseband impedance variations; dynamic characteristics; dynamic transfer characteristics; frequency 2.1 GHz; harmonic impedance; inter-modulation distortion products; microwave power devices; power 2 W; power transistors; Baseband; Current measurement; Delays; Frequency measurement; Frequency modulation; Impedance; Radio frequency; Envelope domain; GaN; IF active load-pull; hysteresis; inter-modulation; memory Effects;
Conference_Titel :
Multi Topic Conference (INMIC), 2013 16th International
Conference_Location :
Lahore
DOI :
10.1109/INMIC.2013.6731333
