Title :
Performance analysis of Si/SiGe double junction solar cell
Author :
Choudhary, Santosh K. ; Ranjan, Rajiv ; Das, Manab Kr
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.
Keywords :
Ge-Si alloys; elemental semiconductors; silicon; solar cells; thin film devices; Si-Si1-xGex; size 0.12 mum; size 0.2 mum; thin film double junction solar cell; Absorption; Current density; Junctions; Photovoltaic cells; Silicon; Silicon germanium; Si/SiGe; conversion efficiency; multijunction; solar cells;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733559
