Bandwidth enhancement for 0.18 µm CMOS transimpedance amplifier circuit

Author

Escid, Hammoudi ; Salhi, Said ; Slimane, Abdelhalim

Author_Institution

Instrum. Lab., USTHB, Bab Ezzouar, Algeria

fYear

2013

fDate

15-18 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, a low noise and high bandwidth transimpedance amplifier (TIA) is designed for optical receiver using a 0.18 μm standard in CMOS technology. The proposed circuit operates at a data rate of 13.25 Gb/s. Employing a series inductive peaking technique, an improvement of bandwidth by only one inductor within the structure is achieved to reach a wide bandwidth of 9.28 GHz. The gain of this amplifier is 53 dB at 9.28 GHz and its input current noise is about 36.12 pA/√Hz.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; operational amplifiers; CMOS transimpedance amplifier circuit; TIA; bandwidth 9.28 GHz; bandwidth enhancement; bit rate 13.25 Gbit/s; gain 53 dB; high bandwidth transimpedance amplifier; inductor; low noise transimpedance amplifier; series inductive peaking technique; size 0.18 mum; CMOS integrated circuits; CMOS technology; Optical amplifiers; Optical filters; Radio frequency; Stimulated emission; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2013 25th International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4799-3569-7

Type

conf

DOI

10.1109/ICM.2013.6734945

Filename

6734945