Title :
Bandwidth enhancement for 0.18 µm CMOS transimpedance amplifier circuit
Author :
Escid, Hammoudi ; Salhi, Said ; Slimane, Abdelhalim
Author_Institution :
Instrum. Lab., USTHB, Bab Ezzouar, Algeria
Abstract :
In this paper, a low noise and high bandwidth transimpedance amplifier (TIA) is designed for optical receiver using a 0.18 μm standard in CMOS technology. The proposed circuit operates at a data rate of 13.25 Gb/s. Employing a series inductive peaking technique, an improvement of bandwidth by only one inductor within the structure is achieved to reach a wide bandwidth of 9.28 GHz. The gain of this amplifier is 53 dB at 9.28 GHz and its input current noise is about 36.12 pA/√Hz.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; operational amplifiers; CMOS transimpedance amplifier circuit; TIA; bandwidth 9.28 GHz; bandwidth enhancement; bit rate 13.25 Gbit/s; gain 53 dB; high bandwidth transimpedance amplifier; inductor; low noise transimpedance amplifier; series inductive peaking technique; size 0.18 mum; CMOS integrated circuits; CMOS technology; Optical amplifiers; Optical filters; Radio frequency; Stimulated emission; Wideband;
Conference_Titel :
Microelectronics (ICM), 2013 25th International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4799-3569-7
DOI :
10.1109/ICM.2013.6734945
