Title :
Preparation and Properties of Ferromagnetic Antiperovskite Co3FeN Thin Films
Author :
Sakakibara, Hideki ; Ando, Hideki ; Miyawaki, Tetsuya ; Ueda, Kazunori ; Asano, Hiroya
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Nagoya, Japan
Abstract :
Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.
Keywords :
cobalt compounds; enhanced magnetoresistance; ferromagnetic materials; iron compounds; magnetic epitaxial layers; magnetisation; sputter deposition; vapour phase epitaxial growth; (La0.18Sr0.82)(Al0.59Ta0.41)O3; (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates; Co3FeN; N2 volume concentration; antiperovskite structure; epitaxial growth; ferromagnetic antiperovskite thin films; negative anisotropic magnetoresistance effect; reactive magnetron sputtering; saturation magnetization; sputtering gas mixture; structural properties; Lattices; Molecular beam epitaxial growth; Perpendicular magnetic anisotropy; Sputtering; Substrates; Anisotropic magnetoresistance (AMR); Co3FeN; antiperovskite; half-metal; thin film;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2326897
