Towards high efficiency multi-junction solar cells grown on InP Substrates

Author

Gonzalez, M. ; Lumb, Matthew P. ; Yakes, Michael K. ; Bailey, Christopher G. ; Tischler, Joseph G. ; Hoheisel, Raymond ; Abell, J. ; Vurgaftman, I. ; Meyer, Jorg ; Maximenko, Sergey ; Jenkins, Phillip P. ; Molina, S.I. ; Delgado-Gonzalez, F.J. ; Bahena, D

Author_Institution

Sotera Defense Solutions, Annapolis Junction, MD, USA

fYear

2013

fDate

16-21 June 2013

Abstract

Progress toward the development of multi-junction solar cells grown on InP substrates is presented. In this material system, the optimal bandgaps for solar energy conversion are attained while the multi-junction structure is realized under lattice matched conditions. In this work, results for the characterization of material and devices of the individual sub cells are shown. For the top cell, InAlAsSb quaternary material is being developed. For the middle, InGaAsP and InGaAlAs are studied, and for the bottom, InGaAs will provide the possibility of adding multiple quantum wells for fine bandgap tunability. In addition, we will discuss electrical characterization of the tunnel diodes.

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; semiconductor growth; semiconductor junctions; semiconductor quantum wells; solar cells; InAlAsSb; InGaAlAs; InGaAsP; InP; bandgap tunability; electrical characterization; energy conversion; high efficiency multijunction solar cells; lattice matched conditions; material system; multijunction structure; multiple quantum wells; optimal bandgaps; quaternary material; tunnel diodes; Indium gallium arsenide; Indium phosphide; Junctions; Lattices; Photonic band gap; Photovoltaic cells; High Efficiency; InP; Multi-junction; Quantum Wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744116

Filename

6744116