Title :
Towards high efficiency multi-junction solar cells grown on InP Substrates
Author :
Gonzalez, M. ; Lumb, Matthew P. ; Yakes, Michael K. ; Bailey, Christopher G. ; Tischler, Joseph G. ; Hoheisel, Raymond ; Abell, J. ; Vurgaftman, I. ; Meyer, Jorg ; Maximenko, Sergey ; Jenkins, Phillip P. ; Molina, S.I. ; Delgado-Gonzalez, F.J. ; Bahena, D
Author_Institution :
Sotera Defense Solutions, Annapolis Junction, MD, USA
Abstract :
Progress toward the development of multi-junction solar cells grown on InP substrates is presented. In this material system, the optimal bandgaps for solar energy conversion are attained while the multi-junction structure is realized under lattice matched conditions. In this work, results for the characterization of material and devices of the individual sub cells are shown. For the top cell, InAlAsSb quaternary material is being developed. For the middle, InGaAsP and InGaAlAs are studied, and for the bottom, InGaAs will provide the possibility of adding multiple quantum wells for fine bandgap tunability. In addition, we will discuss electrical characterization of the tunnel diodes.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; semiconductor growth; semiconductor junctions; semiconductor quantum wells; solar cells; InAlAsSb; InGaAlAs; InGaAsP; InP; bandgap tunability; electrical characterization; energy conversion; high efficiency multijunction solar cells; lattice matched conditions; material system; multijunction structure; multiple quantum wells; optimal bandgaps; quaternary material; tunnel diodes; Indium gallium arsenide; Indium phosphide; Junctions; Lattices; Photonic band gap; Photovoltaic cells; High Efficiency; InP; Multi-junction; Quantum Wells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744116
