Characterization of bulk defect response in Cu(In, Ga)Se2 thin-film solar cell using DLTS

Author

Warren, Charles W. ; Miller, David W. ; Yasin, Fehmi ; Heath, Jennifer T.

Author_Institution

Dept. of Phys., Univ. of Oregon, Eugene, OR, USA

fYear

2013

fDate

16-21 June 2013

Abstract

Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se₂ devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.

Keywords

copper compounds; electric admittance; gallium compounds; indium compounds; selenium compounds; semiconductor thin films; solar cells; ternary semiconductors; Cu(InGa)Se₂; DLTS; N1-admittance feature; admittance spectra; bulk defect response characterization; deep level transient spectra; deep level transient spectroscopy; filling pulse voltage; spatial properties; thin-film solar cell; uniformly distributed bulk defect; Admittance; Capacitance; Filling; Physics; Spectroscopy; Temperature measurement; Transient analysis; amorphous semiconductors; capacitance measurement; photovoltaic cells; semiconductor device measurement; thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744122

Filename

6744122