DocumentCode :
682853
Title :
Novel recombination lifetime mapping technique through Kelvin probe studies
Author :
Alderman, Nick ; Danos, Lefteris ; Grossel, Martin ; Markvart, Tom
Author_Institution :
Solar Energy Lab., Univ. of Southampton, Southampton, UK
fYear :
2013
fDate :
16-21 June 2013
Abstract :
The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.
Keywords :
carrier lifetime; passivation; surface recombination; I-V type dependence; Kelvin probe studies; Sinton WCT-120 lifetime tool; X-Y stage; data extraction; diffusion length; impurity concentrations; surface passivation; surface photovoltage; surface recombination lifetime mapping technique; surface recombination velocities; Kelvin; Passivation; Probes; Radiative recombination; Semiconductor device measurement; Silicon; Kelvin probe; Recombination lifetime; lifetime mapping; surface passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744132
Filename :
6744132
Link To Document :
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