GaAsBi MQWs for multi-junction photovoltaics

Author

Richards, Robert ; Bastiman, Faebian ; Hunter, C.J. ; Mohmad, A.R. ; David, J.P.R. ; Ekins-Daukes, Ned

Author_Institution

Univ. of Sheffield, Sheffield, UK

fYear

2013

fDate

16-21 June 2013

Abstract

A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ~1100nm.

Keywords

III-V semiconductors; bismuth compounds; gallium arsenide; indium compounds; p-i-n diodes; photoluminescence; quantum wells; solar cells; GaAsBi; MQW p-i-n diode; i-region; metal-organic vapour phase epitaxy; molecular beam epitaxy; multijunction photovoltaics; multiple quantum well diode; p-i-n structure; photocurrent; photoluminescence; Bismuth; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photonic band gap; Strain; Bismuth; III-V semiconductor materials; bismuth compounds; materials science and technology; photovoltaic cells; quantum well devices; semiconductor epitaxial layers; semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744153

Filename

6744153