Title :
CdO/ZnO multiple quantum wells as components for next generation solar cells
Author :
Venkatachalapathy, Vishnukanthan ; Galeckas, Augustinas ; Kuznetsov, Andrej Yu
Author_Institution :
Dept. of Phys., Univ. of Oslo, Oslo, Norway
Abstract :
We report on time-resolved and steady state photoluminescence (PL) studies of strained ZnxCd1-xO/ZnO MQW structures grown on c-plane and r-plane sapphire substrates by Metaloranic Vapor Phase Epitaxy. The high crystalline quality of all MQW structures was confirmed by X-ray diffraction measurements. No emission related to ZnO barriers could be resolved in PL spectra implying effective carrier confinement in the quantum wells. The estimated built-in electric field from optical transition is of the order of ~ 1.75 MV/cm. The observed spectral and carrier lifetime variations are discussed in terms of quantum confinement and internal electric field modulation induced by strain.
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; cadmium compounds; photoluminescence; sapphire; semiconductor quantum wells; solar cells; vapour phase epitaxial growth; zinc compounds; CdO-ZnO; X-ray diffraction measurements; carrier lifetime variations; crystalline quality; effective carrier confinement; internal electric field modulation; metalorganic vapor phase epitaxy; next generation solar cells; quantum confinement; sapphire substrates; semiconductor quantum wells; steady state photoluminescence; time-resolved photoluminescence; Absorption; Electric fields; Materials; Photonic band gap; Photovoltaic cells; Quantum well devices; Zinc oxide; II-VI semiconductor materials; Photoluminescence; Photovoltaic cells; Quantum wells; Wide band gap semiconductors; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744162
