DocumentCode :
682891
Title :
Plasma treatment to improve amorphous silicon solar cell´s performance
Author :
Changyong Chen ; Xunming Deng ; Zhaoning Song
Author_Institution :
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1339
Lastpage :
1342
Abstract :
Amorphous silicon-based solar cell is usually composed of two or three multi-junctions, and each of them is formed by a p-layer, an intrinsic layer (i-layer), and an n-layer. The interfaces formed by these layers have been found to play a key role in determining cell performance. Among the interfaces, the p/i interface can be more obviously influential on cell performance, such as open circuit voltage (Voc), fill factor (FF), etc. This is because holes have much low mobility compared with electrons, thus they are more sensitive to the quality of the p/i interfaces. In this study, we reported results about making use of hydrogen plasma treatment to improve quality of the p/i interface, and finally increasing energy conversion efficiency. Our results show that FF can be obviously increased after the plasma treatment at proper powers. We have increased the energy conversion efficiency by 7% compared to that of the sample without plasma treatment. This study developed one way to optimize amorphous silicon-based solar cell.
Keywords :
amorphous semiconductors; plasma materials processing; semiconductor junctions; solar cells; FF; amorphous silicon solar cell performance; efficiency 7 percent; energy conversion efficiency; fill factor; hydrogen plasma treatment; intrinsic layer; multijunctions; n-layer; open circuit voltage; p-i interface; p-layer; Amorphous silicon; Hydrogen; Photonic band gap; Photovoltaic cells; Plasmas; Surface treatment; PN junction; amorphous silicon; interfaces; photovoltaic cell; plasma;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744390
Filename :
6744390
Link To Document :
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