Title :
Solar cell composed of periodic nano-structure and SiGe/Si thin film
Author :
Hsieh, C.-F. ; Wu, Hu-sheng ; Wu, T.-C. ; Liao, M.H.
Author_Institution :
Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
High performance Solar Cell is proposed by the top nano-level layer trench structure and the optimized SiGe/Si type-II substrate hetero-junction. In the visible wavelength range, the reflectance of solar cell can be reduced from 32 % to 10 % by using nano-surface structure. Furthermore, SiGe/Si hetero-structure substrate is also implemented to enhance solar cell transformation efficiency around 3 %. With the combination of these two key technologies, the high efficient (for the stable production is 18 % and 21 % for the peak record) nano-surface textured SiGe-based Solar Cell can be achieved. The current and voltage curves of cells are checked by Center for Measurement Standards (CMS), Industrial Technology Research Institute (ITRI). In the future, the cells can be examined by the humidity/temperature/light soak chamber to estimate the feasibility of industrial application.
Keywords :
Ge-Si alloys; elemental semiconductors; nanostructured materials; silicon; solar cells; thin film devices; CMS; Center for Measurement Standards; ITRI; Industrial Technology Research Institute; SiGe-Si; humidity-temperature-light soak chamber; nanolevel layer trench structure; nanosurface textured solar cell; periodic nanosurface structure; thin film; type-II substrate heterojunction; Photovoltaic cells; Radiative recombination; Silicon; Silicon germanium; Substrates; Surface treatment; Surface waves; Nanostructure fabrication; Photovoltaic; Solar energy; Thin film devices and applications;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744393