DocumentCode :
682897
Title :
Resonant coupling for contactless measurement of carrier lifetime
Author :
Ahrenkiel, R.K. ; Johnston, Steven W.
Author_Institution :
Nat. Renewal Energy Lab., Golden, CO, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1389
Lastpage :
1393
Abstract :
We will describe the operation of the resonance-coupled photoconductive decay (RCPCD) technique. Measurements uses a high quality factor (Q) parallel resonant circuit that is in proximity to the sample under test, the system behaves like a parallel resonant RLC high-Q circuit. The system Q is adjusted by q moveable platform that changes the sample-sensor spacing. The system resonant frequency w0 is modulated b the sample conductivity. The sensitivity increases with system Q, but the response time also increases as 2LQ/sqrt(LC). Here we will present the theory of operation and representative data from a wide range of samples.
Keywords :
Q-factor; carrier lifetime; elemental semiconductors; photoconductivity; sensitivity; silicon; Si; carrier lifetime; contactless measurement; high quality factor parallel resonant circuit; resonance-coupled photoconductive decay method; sample conductivity; sample-sensor spacing; sensitivity; Impedance; Measurement by laser beam; RLC circuits; Semiconductor device measurement; Silicon; Surface waves; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744403
Filename :
6744403
Link To Document :
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