Resonant coupling for contactless measurement of carrier lifetime

Author

Ahrenkiel, R.K. ; Johnston, Steven W.

Author_Institution

Nat. Renewal Energy Lab., Golden, CO, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

1389

Lastpage

1393

Abstract

We will describe the operation of the resonance-coupled photoconductive decay (RCPCD) technique. Measurements uses a high quality factor (Q) parallel resonant circuit that is in proximity to the sample under test, the system behaves like a parallel resonant RLC high-Q circuit. The system Q is adjusted by q moveable platform that changes the sample-sensor spacing. The system resonant frequency w₀ is modulated b the sample conductivity. The sensitivity increases with system Q, but the response time also increases as 2LQ/sqrt(LC). Here we will present the theory of operation and representative data from a wide range of samples.

Keywords

Q-factor; carrier lifetime; elemental semiconductors; photoconductivity; sensitivity; silicon; Si; carrier lifetime; contactless measurement; high quality factor parallel resonant circuit; resonance-coupled photoconductive decay method; sample conductivity; sample-sensor spacing; sensitivity; Impedance; Measurement by laser beam; RLC circuits; Semiconductor device measurement; Silicon; Surface waves; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744403

Filename

6744403