DocumentCode :
682901
Title :
Single image concept for photoluminescence based emitter saturation current imaging using direct calibration by the QSS-μPCD method
Author :
Korsos, Ferenc ; Zsovar, Andras ; Lagowski, Jacek ; Wilson, M. ; Kiss, Zoltan ; Kovacs, Zsolt ; Nadudvari, Gyorgy
Author_Institution :
Semilab Co. Ltd., Budapest, Hungary
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1432
Lastpage :
1435
Abstract :
A photoluminescence imaging based technique is introduced which enables the measurement of an emitter saturation current image of a wafer with only a single PL image over an extended range of material parameters. The QSS-μPCD technique is used for recording an independent reference value for a direct J0e calibration. It is shown that for accurate results in an extended J0e and bulk lifetime range, an estimation of bulk lifetime is very useful. It is shown that from the QSS-μPCD Basore-Hansen plot this bulk lifetime value can be reliably estimated. Calculated lifetime related corrections are compared to experimental results showing good agreement. As a potential industrial in-line application, results from a 1D camera based PL setup are presented.
Keywords :
elemental semiconductors; photoluminescence; silicon; 1D camera; Basore-Hansen plot; QSS-μPCD; Si; bulk lifetime; direct calibration; inline application; photoluminescence-based emitter saturation current imaging; quasisteady-state photoconductance; single photoluminescence image; wafer; Cameras; Correlation; Photoluminescence; Photovoltaic systems; Silicon; charge carrier lifetime; inline; photoluminescence; saturation current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744413
Filename :
6744413
Link To Document :
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