Title :
Intermediate band solar energy conversion in ZnTeO
Author :
Phillips, Jacob ; Teran, Alan ; Chihyu Chen ; Antolin, E. ; Ramiro, I. ; Lopez, Enrique ; Hernandez, E. ; Artacho, I. ; Tablero, C. ; Marti, A. ; Luque, Antonio
Author_Institution :
Dept. of Electr. Eng. & Comp. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.
Keywords :
III-V semiconductors; gallium arsenide; solar cells; tellurium compounds; zinc compounds; GaAs; GaSb; ZnTeO; conduction band edge; emitter layers; intermediate band solar energy conversion in ZnTeO; intermediate electronic states; quantum efficiency; solar cells; window layers; Gallium arsenide; Heterojunctions; Lattices; Photovoltaic cells; Substrates; II-VI semiconductor materials; Photovoltaic cells; heterojunctions; oxygen; photoluminescence;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744459
