Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell

Author

ShaoJun Ma ; Yunpeng Wang ; Sodabanlu, Hassanet ; Watanabe, K. ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2013

fDate

16-21 June 2013

Firstpage

1733

Lastpage

1736

Abstract

In the multiple quantum wells (MQWs) system, deep well supplies wide absorption range, but the large band offset would increase the carrier thermionic escape time exponentially. We utilized asymmetric tunneling-assisted structure in InGaAs/GaAsP strain-balanced MQWs to accelerate the carrier collection. The quantitative model of carrier collection time from this novel structure has been built and the collection time has been calculated to be 31% compared with conventional multiple quantum wells. The solar cell with designed tunneling-assisted structure has been fabricated and the external quantum efficiency of it has been compared with conventional MQWs structure. The temperature dependence has also been investigated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum wells; solar cells; wide band gap semiconductors; InGaAs-GaAsP; MQW solar cell; asymmetric tunneling-assisted structure evaluation; carrier thermionic escape time; deep well; external quantum efficiency; multiple quantum wells system; temperature dependence; Charge carrier density; Energy states; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum well devices; Tunneling; III-V semiconductors; metalorganic vapor phase epitaxy; photovoltaic cells; quantum well; thermo-tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744478

Filename

6744478