Rapid fabrication of Cu(In, Ga)Se2 thin films from Se-containing precursors by the two-step selenization process

We are investigating the two-step selenization process for fabricating Cu(In, Ga)Se₂ thin films with the objectives of a rapid selenization step and a homogeneous film without the addition of sulfur. Here, we focus on Se-containing precursors to gain an understanding of the reaction pathway in order to speed up the selenization process. Elemental depth profiles show that including an optimal amount of Se in the precursor resulted in a more uniform composition throughout the film thickness. Solar cell devices were made from each film. Our goal is to fabricate high-efficiency solar cells by a rapid, two-step selenization that will be transferrable to a simple industrial process.