Recombination stability in polycrystalline Cu2ZnSnSe4 thin films

Author

Buffiere, Marie ; Brammertz, Guy ; El Mel, Abdel-Aziz ; Lenaers, Nick ; Yi Ren ; Zaghi, Armin E. ; Mols, Y. ; Koeble, Christine ; Vleugels, Jef ; Meuris, Marc ; Poortmans, Jozef

Author_Institution

imec - partner of Solliance, Heverlee, Belgium

fYear

2013

fDate

16-21 June 2013

Firstpage

1941

Lastpage

1944

Abstract

Time-resolved photoluminescence analysis shows that as-grown Cu₂ZnSnSe₄ (CZTSe) thin films degrade when they are exposed to air. The analysis of the films prior to degradation reveals relatively long carrier lifetimes. The increase of the recombination rates significantly affects the performance of the related solar cells. Among all the chemical treatments tested to recover the lifetime of the carrier after air exposure, the KCN etching seems to be the most efficient.

Keywords

carrier lifetime; copper compounds; etching; minority carriers; photoluminescence; semiconductor materials; semiconductor thin films; solar cells; time resolved spectra; tin compounds; zinc compounds; Cu₂ZnSnSe₄; carrier lifetimes; chemical treatments; degradation; etching; recombination rates; recombination stability; solar cells; thin films; time-resolved photoluminescence analysis; Charge carrier lifetime; Chemicals; Degradation; Photovoltaic cells; Pollution measurement; Surface contamination; Surface treatment; CZTSe; charge carrier lifetime; solar cells; surface properties; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744850

Filename

6744850