DocumentCode
683113
Title
Selenium flux effects on Cu(In, Ga)Se2 growth rate, and control by in-line X-ray fluorescence
Author
Dwyer, Daniel J. ; Schujman, Sandra B. ; Novak, Jennifer A. ; Metacarpa, David J. ; Haldar, Pradeep
Author_Institution
Coll. of Nanoscale Sci. & Eng. (CNSE), Univ. at Albany - SUNY, Albany, NY, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1957
Lastpage
1960
Abstract
In-line X-ray fluorescence (XRF) is demonstrated for Cu(In, Ga)Se2 (CIGS) co-evaporation source control. XRF is found to accurately measure film composition for direct metals source control, as well as an indirect monitor for selenium rate using the nature of the self-limiting diselenide. It was found that below an optimum Se flux value, the film growth rate is limited by the Se atom availability, while a higher Se overpressure reduces the growth rate by gas phase scattering. This correlation allows the growth rate to act as a monitor and possible control mechanism for production scale CIGS thermal evaporation. It is also possible to use the thickness measured by XRF as a feedback control for the Se overpressure.
Keywords
X-ray fluorescence analysis; copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; ternary semiconductors; vacuum deposition; CuInGaSe2; XRF; coevaporation source control; direct metals source control; feedback control; film growth rate; gas phase scattering; in-line X-ray fluorescence; selenium flux effects; selenium rate; self-limiting diselenide; thermal evaporation; thin films; Films; Fluorescence; Metals; Monitoring; Substrates; Temperature measurement; Valves; CIGS; Se-overpressure; X-ray fluorescence; growth rate; in-line metrology;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744854
Filename
6744854
Link To Document